advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 30v simple drive requirement r ds(on) 6m fast switching characteristic i d 60a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.4 /w rthj-a 62.5 /w data & specifications subject to change without not ice total power dissipation 3 2 201407292 1 storage temperature range operating junction temperature range -55 to 150 -55 to 150 thermal data parameter maximum thermal resistance, junction-ambient (pcb m ount) 3 total power dissipation gate-source voltage + 20 drain current, v gs @ 10v, (chip) 60 drain current, v gs @ 10v, (chip) 38 pulsed drain current 1 160 parameter rating drain-source voltage 30 AP4024EH 36.7 halogen-free product g d s to-252(h) ap4024 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n-resistance and fast switching performance. it provides the designer with an ext reme efficient device for use in a wide range of power application s. the to-252 package is widely preferred for all commercial-i ndustrial surface mount applications using infrared reflow techniqu e and suited for high current application due to the low connection resistance. g d s .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - 4 6 m v gs =4.5v, i d =20a - 5.5 9 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 120 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =20a - 17 27 nc q gs gate-source charge v ds =24v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 11 - nc t d(on) turn-on delay time v ds =15v - 8 - ns t r rise time i d =30a - 65 - ns t d(off) turn-off delay time r g =3.3 - 22 - ns t f fall time v gs =10v - 7 - ns c iss input capacitance v gs =0v - 1500 2400 pf c oss output capacitance v ds =25v - 260 - pf c rss reverse transfer capacitance f=1.0mhz - 180 - pf r g gate resistance f=1.0mhz - 1.3 2.6 source-drain diode symbol parameter test conditions min. typ. max. units i s source current ( body diode ) - - 60 a v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time i s =30a, v gs =0 v , - 15 - ns q rr reverse recovery charge di/dt=100a/s - 6 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board AP4024EH .
AP4024EH fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 6.0v 5.0 v v g =4.0v 0 40 80 120 160 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 6.0v 5.0 v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 5 10 15 20 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 3 4 5 6 7 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d =20a t c =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua .
AP4024EH fig 7. gate charge characteristics fig 8. typical capacitance characterist ics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. case fig 12 . transfer characteristics temperature 4 0 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =24v 0 500 1000 1500 2000 1 7 13 19 25 31 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 20 40 60 80 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) 0 20 40 60 80 100 0 1 2 3 4 5 6 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -40 o c operation in this area limited by r ds(on) .
AP4024EH fig 13. normalized bv dss v.s. junction fig 14. total power di ssipation fig 15. typ. drain-source on state resistance 5 0 10 20 30 40 50 0 20 40 60 80 i d , drain current (a) r ds(on) (m ? ) t j =25 o c v gs =3.0 v 4.0v 4.5v 5.0v v gs =10 v 0 10 20 30 40 0 50 100 150 t c , case temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma v gs =3.5v .
AP4024EH marking information 6 part number package code date code (ywwsss) y last digit of the year ww week sss sequence 4024eh ywwsss .
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